Hydrogenated amorphous silicon produced by laser induced chemical vapor deposition of silane
- 1 August 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (3) , 273-275
- https://doi.org/10.1063/1.94324
Abstract
The electronic properties of hydrogenated amorphous silicon (a-Si:H) produced by laser-induced chemical vapor deposition of silane are reported. Spin density and both optical gap and hydrogen content increased with decreasing substrate temperature. Electrical conductivities are reported. Film properties are superior to those produced by conventional chemical vapor deposition of silane.Keywords
This publication has 14 references indexed in Scilit:
- Recent advances in amorphous silicon solar cellsSolar Energy Materials, 1982
- Laser chemical vapor deposition: A technique for selective area depositionJournal of Applied Physics, 1981
- Properties of amorphous hydrogenated silicon, with special emphasis on preparation by sputteringSolar Energy Materials, 1981
- E.S.R. in doped CVD amorphous silicon filmsPhilosophical Magazine Part B, 1981
- Recent developments in amorphous silicon solar cellsSolar Energy Materials, 1980
- Characterized of glow-discharge deposited a-Si:HSolar Energy Materials, 1980
- Optical characterization of amorphous silicon hydride filmsSolar Cells, 1980
- Temperature variation of the absorption edge of CVD amorphous and polycrystalline siliconSolar Energy Materials, 1979
- Hydrogen content and density of plasma-deposited amorphous silicon-hydrogenJournal of Applied Physics, 1979
- Chemical vapor deposition of silicon using a CO2 laserApplied Physics Letters, 1978