Quantum interference in ultrashort channel length silicon metal-oxide-semiconductor field-effect transistors
- 14 October 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (16) , 2028-2030
- https://doi.org/10.1063/1.106121
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- A metal-oxide-semiconductor field-effect transistor with a 20-nm channel lengthJournal of Applied Physics, 1990
- Possible observation of transmission resonances in transistorsPhysical Review B, 1988
- Localization and Electron-Electron Interaction Effects in Submicron-Width Inversion LayersPhysical Review Letters, 1982
- Electronic properties of two-dimensional systemsReviews of Modern Physics, 1982