A metal-oxide-semiconductor field-effect transistor with a 20-nm channel length
- 1 September 1990
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 68 (5) , 2493-2495
- https://doi.org/10.1063/1.346512
Abstract
We have fabricated a Si metal‐oxide‐semiconductor field‐effect transistor with a 20‐nm channel length using a novel step/edge technique. An Al gate is evaporated onto a step in the SiO2 gate oxide. A second Al gate, separated from the first by a plasma‐enhanced chemical‐vapor‐deposited SiO2 layer, provides inversion layer extensions of the source and drain contacts. Electrical conductance measurements indicate a channel length approximately equal to the fabricated gate length.This publication has 6 references indexed in Scilit:
- Design and experimental technology for 0.1-µm gate-length low-temperature operation FET'sIEEE Electron Device Letters, 1987
- High Quality Deposition of SiO2 Downstream from a Microwave DischargeMRS Proceedings, 1987
- Low-temperature deposition of high-quality silicon dioxide by plasma-enhanced chemical vapor depositionJournal of Applied Physics, 1986
- Observation of electron velocity overshoot in sub-100-nm-channel MOSFET's in SiliconIEEE Electron Device Letters, 1985
- Review of oxidation processes in plasmas†Journal of Physics and Chemistry of Solids, 1983
- Reactive ion etching for VLSIIEEE Transactions on Electron Devices, 1981