Depth Profiling of Hydrogen Implanted into Magnetic Bubble Garnet Films Using the 1H(15N, αγ)12C Reaction
- 1 February 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (2R)
- https://doi.org/10.1143/jjap.30.290
Abstract
Using the 1H(15N, αγ)12C reaction, we have realized a high-resolution profiling of depth distribution of hydrogen implanted into the magnetic bubble garnet (MBG) films. The experimental results are compared with predictions from the Monte-Carlo simulation code (TRIM85). We have investigated two phenomena by observing the thermal behavior of hydrogen in the MBG films: 1) the efficiency of the SiO2 layer deposited onto the MBG film to suppress the hydrogen out-diffusion and 2) the effect of plasma exposure on MBG films that have been predamaged by Ne irradiation. We have obtained useful knowledge to achieve a large anisotropy field change that plays an important role for the production of the magnetic bubble memory devices with high storage density. New features are reported to understand the thermal behavior of hydrogen in the MBG films.Keywords
This publication has 6 references indexed in Scilit:
- Ion implantation in magnetic garnetNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Hydrogen out-diffusion suppression effect of overlayers in H+2 -implanted magnetic bubble garnetJournal of Applied Physics, 1986
- Recent development in magnetic-bubble memoryProceedings of the IEEE, 1986
- Hydrogen depth profiles in ion implanted magnetic bubble garnetsApplied Physics Letters, 1985
- Ion-implantation conditions and annealing effects for contiguous disk bubble devicesIEEE Transactions on Magnetics, 1980
- Suppression of hard bubbles in magnetic garnet films by ion implantation: Dependence on ion species, dose, energy, and annealingApplied Physics Letters, 1973