Large peak-to-valley current ratios in triple barrier heterostructures
- 31 December 1989
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 32 (12) , 1095-1099
- https://doi.org/10.1016/0038-1101(89)90196-2
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Inelastic tunneling in (111) oriented AlAs/GaAs/AlAs double-barrier heterostructuresApplied Physics Letters, 1989
- AlGaAs/GaAs double barrier diodes with high peak-to-valley current ratioApplied Physics Letters, 1987
- Dependence of resonant tunneling current on Al mole fractions in AlxGa1−xAs-GaAs-AlxGa1−xAs double barrier structuresApplied Physics Letters, 1987
- Transport in double-barrier resonant tunneling structuresJournal of Applied Physics, 1987
- MBE growth of InGaAs-InGaAlAs heterostructures for applications to high-speed devicesJournal of Crystal Growth, 1987
- Millimeter-band oscillations based on resonant tunneling in a double-barrier diode at room temperatureApplied Physics Letters, 1987
- Large room-temperature effects from resonant tunneling through AlAs barriersApplied Physics Letters, 1986
- Inverted base-collector tunnel transistorsApplied Physics Letters, 1985
- Resonant tunneling transistor with quantum well base and high-energy injection: A new negative differential resistance deviceJournal of Applied Physics, 1985