Millimeter-band oscillations based on resonant tunneling in a double-barrier diode at room temperature
- 12 January 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (2) , 83-85
- https://doi.org/10.1063/1.97826
Abstract
A double-barrier diode at room temperature has yielded oscillations with fundamental frequencies up to 56 GHz and second harmonics up to 87 GHz. The output powers at these frequencies were about 60 and 18 μW, respectively. These results are attributed to a recent improvement in the material parameters of the device and to the integration of the device into a waveguide resonator. The most successful diode to date has thin (∼1.5 nm) AlAs barriers, a 4.5-nm-wide GaAs quantum well, and 2×1017 cm−3 doping concentration in the n-GaAs outside the barriers. This particular diode is expected to oscillate at frequencies higher than those achieved by any reported p-n tunnel diode.Keywords
This publication has 12 references indexed in Scilit:
- VIB-1 millimeter-band oscillations in a resonant-tunneling deviceIEEE Transactions on Electron Devices, 1986
- Large room-temperature effects from resonant tunneling through AlAs barriersApplied Physics Letters, 1986
- Dependence of resonant tunneling current on well widths in AlAs/GaAs/AlAs double barrier diode structuresApplied Physics Letters, 1986
- Sequential resonant tunneling through a multiquantum well superlatticeApplied Physics Letters, 1986
- Resonant tunneling oscillations in a GaAs-AlxGa1−xAs heterostructure at room temperatureApplied Physics Letters, 1985
- Thermal Stability of a Short Period AlAs/n-GaAs SuperlatticeJapanese Journal of Applied Physics, 1985
- Quantum well oscillatorsApplied Physics Letters, 1984
- Resonant tunneling through quantum wells at frequencies up to 2.5 THzApplied Physics Letters, 1983
- Resonant tunneling in semiconductor double barriersApplied Physics Letters, 1974
- Tunneling in a finite superlatticeApplied Physics Letters, 1973