Combined effect of strained-layer superlattice and annealing in defects reduction in GaAs grown on Si substrates
- 2 October 1989
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (14) , 1442-1444
- https://doi.org/10.1063/1.101581
Abstract
The high defect density in GaAs grown on Si can be reduced by the combined use of the strained superlattices (InGaAs-GaAsP) and annealing. The strained-layer superlattice (SLS) bends the dislocations and acts as a medium for dislocations interactions, and annihilations. Highly strained SLS (∼2%) is required to bend the dislocations and keep them bent at the SLS interfaces. The SLS coupled with annealing permits a remarkable reduction of threading dislocation density. Annealing provides the energy for threading dislocations to interact with the SLSs and improves their efficiency significantly.Keywords
This publication has 8 references indexed in Scilit:
- Interactions of dislocations in GaAs grown on Si substrates with InGaAs-GaAsP strained layered superlatticesJournal of Applied Physics, 1988
- Comparative studies of defects in GaAs on silicon substrates using electron-beam-induced current and transmission electron microscopyJournal of Applied Physics, 1988
- Single-crystal x-ray diffraction study of the InGaAs-GaAsP/GaAs superlattice systemApplied Physics Letters, 1988
- Effectiveness of strained-layer superlattices in reducing defects in GaAs epilayers grown on silicon substratesApplied Physics Letters, 1987
- Low threshold pulsed and continuous laser oscillation from AlGaAs/GaAs double heterostructures grown by metalorganic chemical vapor deposition on Si substratesApplied Physics Letters, 1987
- Effect of dislocations on the efficiency of thin-film GaAs solar cells on Si substratesJournal of Applied Physics, 1986
- Defect reduction in GaAs epitaxial layers using a GaAsP-InGaAs strained-layer superlatticeApplied Physics Letters, 1985
- Fabrication of GaAs MESFET Ring Oscillator on MOCVD Grown GaAs/Si(100) SubstrateJapanese Journal of Applied Physics, 1984