Anisotropic plasmon dispersion in a lateral quantum-wire superlattice
- 1 October 1990
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 65 (14) , 1804-1807
- https://doi.org/10.1103/physrevlett.65.1804
Abstract
Plasmon excitations for a lateral superlattice of quantum wires in a modulation-doped GaAs/(AlGa)As multiple-quantum-well system have been investigated by resonant inelastic light scattering. The Raman spectra exhibit a set of resonances with a strongly anisotropic dispersion. For momentum transfer parallel to the wires, a significant dispersion is observed; perpendicular to the wires, the dispersion is nearly flat. This is an experimental proof that Coulomb interaction between neighboring wires is weak and that the excitations represent confined plasmons of the individual wires. They provide a direct measure of the width of the electron channels.Keywords
This publication has 14 references indexed in Scilit:
- Dimensional excitations in narrow electron inversion channels on SiPhysical Review B, 1989
- Electron gas in semiconductor multiple quantum wires: Spatially indirect optical transitionsPhysical Review Letters, 1989
- Bulk and edge plasmons in multiple-striped superlatticesSolid State Communications, 1989
- Quantum theory of plasmons in lateral multiwire superlattices in the presence of subband quantization: Intersubband plasmonsPhysical Review B, 1989
- Far-infrared response of one-dimensional electronic systems in single- and two-layered quantum wiresPhysical Review B, 1988
- One-dimensional electronic systems in ultrafine mesa-etched single and multiple quantum well wiresApplied Physics Letters, 1988
- Plasmon band structure in a lateral multiwire semiconductor superlatticePhysical Review B, 1986
- Magnetoplasma modes of a spatially periodic two-dimensional electron gasSolid State Communications, 1986
- Magnetic Depopulation of 1D Subbands in a Narrow 2D Electron Gas in a GaAs:AlGaAs HeterojunctionPhysical Review Letters, 1986
- Screening and elementary excitations in narrow-channel semiconductor microstructuresPhysical Review B, 1985