Stable transverse mode oscillation in planar stripe laser with deep Zn diffusion
- 1 October 1979
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 15 (10) , 1189-1196
- https://doi.org/10.1109/jqe.1979.1069901
Abstract
No abstract availableThis publication has 26 references indexed in Scilit:
- High-power fundamental-transverse-mode strip buried heterostructure lasers with linear light-current characteristicsApplied Physics Letters, 1978
- Transverse mode stabilized AlxGa1-xAs injection lasers with channeled-substrate-planar structureIEEE Journal of Quantum Electronics, 1978
- New Stripe Geometry Laser with High Quality Lasing Characteristics by Horizontal Transverse Mode Stabilization –A Refractive Index Guiding with Zn DopingJapanese Journal of Applied Physics, 1977
- Transverse-junction-stripe lasers with a GaAs p-n homojunctionIEEE Journal of Quantum Electronics, 1975
- Gain−induced guiding and astigmatic output beam of GaAs lasersJournal of Applied Physics, 1975
- GaAs–Ga1−xAlxAs buried-heterostructure injection lasersJournal of Applied Physics, 1974
- Transverse-junction-stripe-geometry double-heterostructure lasers with very low threshold currentJournal of Applied Physics, 1974
- A GaAs-AlxGa1-xAs Double Heterostructure Planar Stripe LaserJapanese Journal of Applied Physics, 1973
- A theory for filamentation in semiconductor lasers including the dependence of dielectric constant on injected carrier densityOptical and Quantum Electronics, 1972
- Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°KSolid-State Electronics, 1968