The Novel Capacitor Structure with Polysilicon Grain Hole for Advanced Dynamic Random Access Memory
- 1 January 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (1S)
- https://doi.org/10.1143/jjap.33.578
Abstract
A simple and new technique to realize relatively large capacitance for high density dynamic random access memory (DRAM) is discussed. This technique adopts the surface modulation technology on bottom electrode polysilicon of stacked capacitor structure, and holes are created in the bottom polysilicon grains. The grain holes are achieved by reactive ion etching (RIE) using the oxide at the grain boundary as etch mask. The capacitance can be increased up to four times, while keeping the leakage current comparable to that of conventional stacked capacitors.Keywords
This publication has 3 references indexed in Scilit:
- The honeycomb-shape capacitor structure for ULSI DRAMIEEE Electron Device Letters, 1993
- The fabrication and electrical properties of modulated stacked capacitor for advanced DRAM applicationsIEEE Electron Device Letters, 1992
- Thin nitride films on textured polysilicon to increase multimegabit DRAM cell charge capacityIEEE Electron Device Letters, 1990