Impurity distribution and electrical characteristics of boron-doped Si1?x Ge x /Si p +/N heterojunction diodes produced using pulsed UV-laser-induced epitaxy and Gas-immersion laser doping
- 1 July 1993
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 57 (1) , 91-95
- https://doi.org/10.1007/bf00331223
Abstract
No abstract availableKeywords
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