Low-temperature fabrication of p/sup +/-n diodes with 300-AA junction depth
- 1 July 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 13 (7) , 369-371
- https://doi.org/10.1109/55.192758
Abstract
Gas immersion laser doping (GILD) was used to fabricate p/sup +/-n diodes with 300-AA junction depth. These diodes exhibit ideality factors of 1.01-1.05 over seven decades of current, reverse leakage current densitiesKeywords
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