Si ultrashallow p+n junctions using low-energy boron implantation
- 15 April 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (15) , 1626-1628
- https://doi.org/10.1063/1.105146
Abstract
Ultrashallow boron‐doped junctions in silicon have been investigated using secondary‐ion mass spectroscopy and four‐point probe technique. The junctions were obtained by implanting B+ ions into n‐type Si(100) at 200 eV to doses of 1.5×1014 and 6×1014 cm−2 and at substrate temperatures in the range 30–900 °C during B implantation. Both post‐implantation in situ annealing by electron bombardment heating and rapid thermal annealing in a separate system were employed. The results show that sub 20 nm p+n junctions are obtained without the need for further processes such as preamorphization and high‐temperature annealing.Keywords
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