Wide band gap amorphous silicon thin films prepared by chemical annealing

This publication has 23 references indexed in Scilit:

• In situ real time studies of the formation of polycrystalline silicon films on glass grown by a layer-by-layer technique
  Applied Physics Letters, 1995
• Roles of Atomic Hydrogen in Chemical Annealing
  Japanese Journal of Applied Physics, 1995
• High-Quality Wide-Gap Hydrogenated Amorphous Silicon Fabricated Using Hydrogen Plasma Post-Treatment
  Japanese Journal of Applied Physics, 1994
• Amorphous Silicon Alloy Photovoltaic Technology - from R&D to Production
  MRS Proceedings, 1994
• Relationship among mobility, recombination kinetics, and optimized solar cell performance
  Applied Physics Letters, 1993
• Double-junction amorphous silicon-based solar cells with 11% stable efficiency
  Applied Physics Letters, 1992
• A novel preparation technique for preparing hydrogenated amorphous silicon with a more rigid and stable Si network
  Applied Physics Letters, 1991
• Narrow Band-Gap a-Si:H with Improved Minority Carrier-Transport Prepared by Chemical Annealing
  Japanese Journal of Applied Physics, 1991
• Glow-discharge amorphous silicon: Growth process and structure
  Materials Science Reports, 1987
• Reversible conductivity changes in discharge-produced amorphous Si
  Applied Physics Letters, 1977