LPE growth of DH laser structures with the double source method
- 1 December 1978
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 45, 262-266
- https://doi.org/10.1016/0022-0248(78)90446-3
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Multiple-layer liquid phase epitaxy of GaAs by controlled supercooling of Ga solutionsJournal of Crystal Growth, 1977
- Epitaxial growth of GaAs from thin Ga solutionJournal of Applied Physics, 1976
- The influence of growth solution thickness on the LPE layer thickness and constitutional supercooling requirement for diffusion-limited growthJournal of Crystal Growth, 1974
- Liquid phase epitaxial growth of six-layer GaAs/(GaAl)As structures for injection lasers with 0.04 μm thick centre layerJournal of Crystal Growth, 1974
- Thickness and surface morphology of GaAs LPE layers grown by supercooling, step-cooling, equilibrium-cooling, and two-phase solution techniquesJournal of Crystal Growth, 1974
- Improved boat for multiple-bin liquid phase epitaxyJournal of Crystal Growth, 1973
- Isothermal diffusion theory of LPE: GaAs, GaP, bubble garnetJournal of Crystal Growth, 1973
- Thin solution multiple layer epitaxyJournal of Crystal Growth, 1972
- Preparation of multilayer LPE heterostructures with crystalline solid solutions of AlxGa1−xAs: Heterostructure lasersMetallurgical Transactions, 1971