DX centers in Sn-doped Ga0.7Al0.3As

Publisher Website

1 March 1989

journal article
Published by Springer Nature in Journal of Electronic Materials

Vol. 18 (2) , 207-208
https://doi.org/10.1007/bf02657409

Abstract

No abstract available

Keywords

This publication has 13 references indexed in Scilit:

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Physical Review B, 1988
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DXcenter: Crossover of deep and shallow states in Si-doped ${Al}_{x}$ ${Ga}_{1 - x}$ As
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Deep donor model for the persistent photoconductivity effect
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A Model for DX Centers: Bond Reconstruction due to Local Random Donor-Host Atom Configurations in Mixed Semiconductor Alloys
Japanese Journal of Applied Physics, 1985
Photoconductivity storage in Ga1−xAlxAs alloys at low temperatures
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Trapping characteristics and a donor-complex ( $DX$ ) model for the persistent-photoconductivity trapping center in Te-doped ${Al}_{x} {Ga}_{1 - x} As$
Physical Review B, 1979
Large-Lattice-Relaxation Model for Persistent Photoconductivity in Compound Semiconductors
Physical Review Letters, 1977
Long-lifetime photoconductivity effect in n-type GaAlAs
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