Positioning of self-assembled, single-crystal, germanium islands by silicon nanoimprinting
- 22 March 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (12) , 1773-1775
- https://doi.org/10.1063/1.123683
Abstract
Strain energy from the lattice mismatch of a heteroepitaxial system can create “self-assembled,” single-crystal islands irregularly arranged on the surface. Alternatively, features of tens of nanometers can be patterned on a substrate by “nanoimprinting” using a mold and etching. When these two techniques are combined, the small patterned features can interact with the self-assembly process, causing the islands to form at the patterned features. The resulting regular array of very small islands may be useful for future devices. The positioning of single-crystal Ge islands by Si mesas formed by nanoimprinting and etching is demonstrated in this letter.Keywords
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