Lithographic positioning of self-assembled Ge islands on Si(001)
- 1 September 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 71 (9) , 1201-1203
- https://doi.org/10.1063/1.119625
Abstract
Ge islands were deposited on Si(001) partially covered with patterned oxide. Selective Si was deposited on some wafers before Ge deposition to form raised Si(001) plateaus with well-defined sidewall facets. On narrow lines, the Ge islands locate preferentially at the edges of the raised Si(001) regions, and the preference is strongest on the narrowest patterns aligned along a 〈100〉 direction. For a 450 nm wide plateau aligned in this direction, all the islands are positioned along the edges of the pattern, with a 300 nm space near the center of the pattern free of Ge islands. The islands appear to be uniformly spaced along the pattern edges. On wider lines, several rows of islands are aligned near the edges of the pattern, with the order decreasing farther from the edge.Keywords
This publication has 12 references indexed in Scilit:
- Deposition of three-dimensional Ge islands on Si(001) by chemical vapor deposition at atmospheric and reduced pressuresJournal of Applied Physics, 1997
- Self-Organization in Growth of Quantum Dot SuperlatticesPhysical Review Letters, 1996
- Vertically Self-Organized InAs Quantum Box Islands on GaAs(100)Physical Review Letters, 1995
- Photoluminescence study of the crossover from two-dimensional to three-dimensional growth for Ge on Si(100)Applied Physics Letters, 1995
- Island formation during growth of Ge on Si(100): A study using photoluminescence spectroscopyApplied Physics Letters, 1995
- Fabrication of SiGe quantum wires and dots by low pressure chemical vapour deposition on patterned silicon substratesMaterials Science and Technology, 1995
- Surface migration induced self-aligned InAs islands grown by molecular beam epitaxyApplied Physics Letters, 1995
- Logical devices implemented using quantum cellular automataJournal of Applied Physics, 1994
- Microstructural evolution during the heteroepitaxy of Ge on vicinal Si(100)Journal of Applied Physics, 1991
- Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)Physical Review Letters, 1990