Positively charged states of a hydrogen atom in p-type InP

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Abstract
It has been demonstrated that atomic hydrogen drifts as a charged state in p‐type InP and the presence of a high‐electric field strongly affects the dissociation of the hydrogen‐acceptor complex. During reverse‐bias anneal experiments on the n+‐p diode, it is confirmed that a charged hydrogen is accelerated out the high‐field region below the breakdown voltage. The dissociation frequencies dependent on the applied bias voltage increase from 5.6×10−6 to 2.3×10−5 s−1 at 150 °C as the bias voltage is increased from 3 to 9 V. The dissociation energies calculated from the first‐order kinetics are in the ranges of 1.58–1.40 eV, at 3–7 V annealing. It is proposed that atomic hydrogen in Zn‐doped p‐type InP exposed to the plasma hydrogen could be positively charged and strongly passivates the charged Zn acceptor, and also the hydrogen of the hydrogen‐Zn acceptor complex can be released with the help of minority carriers or/and the loss of the charged hydrogen atom by the electric field.