Anisotropic-etching process simulation system MICROCAD analyzing complete 3D etching profiles of single crystal silicon
- 22 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Simulation of two-dimensional etch profile of silicon during orientation-dependent anisotropic etchingPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- CAD for silicon anisotropic etchingPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Compensation structures for convex corner micromachining in siliconSensors and Actuators A: Physical, 1990
- Micro-machining: A survey of the most commonly used processesSensors and Actuators, 1989
- Morphology analysis in localized crystal growth and dissolutionJournal of Crystal Growth, 1979
- Anisotropic Etching of SiliconJournal of Applied Physics, 1969
- Use of Modified Free Energy Theorems to Predict Equilibrium Growing and Etching ShapesJournal of Applied Physics, 1962
- Orientation-Dependent Dissolution of GermaniumJournal of Applied Physics, 1960