Comparison between p-type dopants for shallow junction formation by diffusion from an ion implanted silicide
- 1 March 1989
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 39 (1-4) , 330-333
- https://doi.org/10.1016/0168-583x(89)90796-9
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Limitations of TiSi2 as a source for dopant diffusionApplied Physics Letters, 1988
- Abnormal solid solution and activation behavior in Ga-implanted Si(100)Applied Physics Letters, 1987
- Titanium silicide formation on BF+2-implanted siliconApplied Physics Letters, 1985