Abnormal solid solution and activation behavior in Ga-implanted Si(100)
- 14 December 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (24) , 2037-2039
- https://doi.org/10.1063/1.98284
Abstract
Rapid thermal annealing (RTA) and furnace annealing of Ga‐implanted Si were studied. Ga atoms implanted into Si are located on substitutional lattice sites in concentration above the solid solubility limit after short‐time and low‐temperature annealing. Low‐resistivity shallow p+ junctions can be fabricated using this metastable layer. However, precipitation and redistribution of the Ga atoms were observed after high‐temperature or longer time annealing. Shallow p+ junctions fabricated by Ga implantation and RTA are suitable for submicron complementary‐metal‐oxide‐semiconductor devices.Keywords
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