An Electrical Resistivity Study of Lattice Defects in Deformed Iron

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Abstract
To elucidate the effects of purify and deformation temperature on the production of lattice defects, strain-induced electrical resistivity Δρ has been measured at -196°C as a function of true strain ε T . In deformation at -196°C, Δρ varying according to ε T 3/4 has been divided into a part Δρ a which anneals out at room temperature and its residual part Δρ r . The latter changes linearly with ε T . The rate of increase of Δρ becomes larger as the purity is reduced, but does not depend on method of straining, i.e., interrupted deformation or continuous one. In deformation at room temperature, the rate is much lower than that at -196°C, and is less dependent on purity. An analysis of Δρ r , and Δρ under room temperature deformation indicates that dislocations are the major contributions to Δρ r and Δρ, and the specific resistivity of dislocations in iron is evaluated as (1.0±0.4)×10-18 Ω cm3.