Exciton binding energies in II–VI compound strained layer superlattices
- 31 December 1991
- journal article
- Published by Elsevier in Superlattices and Microstructures
- Vol. 9 (4) , 461-465
- https://doi.org/10.1016/0749-6036(91)90171-m
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Excitonic luminescence and the effect of high excitation in ZnSeZnS strained-layer superlattices grown on ZnS substratesJournal of Crystal Growth, 1990
- Photoluminescence of wide bandgap II–VI superlatticesJournal of Crystal Growth, 1990
- Growth of ZnSe/ZnS strained-layer superlattices on Si substratesJournal of Applied Physics, 1988
- Excitonic and edge emissions in MOCVD-grown ZnS films and ZnSe-ZnS superlatticesJournal of Crystal Growth, 1988
- Effects of strain and temperature on excitonic emissions in ZnSeZnS strained-layer superlattices grown by low-pressure MOCVDJournal of Crystal Growth, 1988
- Growth of ZnSe-ZnS Strained-Layer Superlattices by Metallorganic Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1987
- Exciton binding energy in quantum wellsPhysical Review B, 1982
- Observation of the excited level of excitons in GaAs quantum wellsPhysical Review B, 1981