AlxGa1−xAs-GaAs-InyGa1−yAs quantum well heterostructure lasers with native oxide current-blocking windows formed on metallized devices
- 18 April 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (16) , 2151-2153
- https://doi.org/10.1063/1.111660
Abstract
Data are presented demonstrating improved laser operation of AlxGa1−xAs‐GaAs‐InyGa1−yAs quantum well heterostructures modified with buried native oxide current‐blocking windows. The windows are formed by low temperature (425 °C) anisotropic ‘‘wet’’ oxidation of an Al0.9Ga0.1As layer exposed at the facets of metallized laser bars. These window devices operate continuously to powers as high as 248 mW/facet (uncoated, ∼10.5 μm aperture), a ∼25% improvement over nonwindow devices.Keywords
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