Low pressure MOVPE grown AlGaN for UV photodetector applications
- 6 May 1999
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 59 (1-3) , 401-406
- https://doi.org/10.1016/s0921-5107(98)00357-2
Abstract
No abstract availableThis publication has 21 references indexed in Scilit:
- Schottky barrier photodetectors based on AlGaNApplied Physics Letters, 1998
- Determination of the Al mole fraction and the band gap bowing of epitaxial AlxGa1−xN filmsApplied Physics Letters, 1997
- Photoconductor gain mechanisms in GaN ultraviolet detectorsApplied Physics Letters, 1997
- Schottky barrier detectors on GaN for visible–blind ultraviolet detectionApplied Physics Letters, 1997
- Very low dark current metal–semiconductor–metal ultraviolet photodetectors fabricated on single-crystal GaN epitaxial layersApplied Physics Letters, 1997
- Al x Ga 1−x N (0⩽x⩽1) ultraviolet photodetectors grown on sapphire by metal-organic chemical-vapor depositionApplied Physics Letters, 1997
- Mechanisms of recombination in GaN photodetectorsApplied Physics Letters, 1996
- High responsitivity intrinsic photoconductors based on AlxGa1−xNApplied Physics Letters, 1996
- Semiconductor ultraviolet detectorsJournal of Applied Physics, 1996
- Visible-blind ultraviolet photodetectors based onGaN p - n junctionsElectronics Letters, 1995