Freezing of the 2 × 1 structure at commensurate Ag(100)Si(100) interface
- 1 October 1992
- journal article
- Published by Elsevier in Surface Science
- Vol. 276 (1-3) , 166-173
- https://doi.org/10.1016/0039-6028(92)90705-b
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- Schottky-barrier inhomogeneity at epitaxialinterfaces on Si(100)Physical Review Letters, 1991
- Atomic-structure-dependent Schottky barrier at epitaxial Pb/Si(111) interfacesPhysical Review Letters, 1990
- Epitaxial growth of silicon on Si(001) by scanning tunneling microscopyJournal of Vacuum Science & Technology A, 1990
- Scanning-tunneling-microscopy studies of Ag on Si(100)-(2×1)Physical Review Letters, 1989
- Scanning-tunneling-microscopy study of single-domain Si(001) surfaces grown by molecular-beam epitaxyPhysical Review Letters, 1989
- Determination of the bonding and growth of Ag on Si(100)-(2×1)Physical Review B, 1988
- Stabilities of single-layer and bilayer steps on Si(001) surfacesPhysical Review Letters, 1987
- Reflection electron microscopyJournal of Applied Crystallography, 1987
- Deposition of Ag on Si(100) Surfaces as Studied by LEED-AESJapanese Journal of Applied Physics, 1977
- Complex lattice potentials in electron diffraction calculated for a number of crystalsActa Crystallographica Section A, 1970