Characterization of vapor phase growth using X-ray techniques
- 1 January 1995
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 146 (1-4) , 104-111
- https://doi.org/10.1016/0022-0248(94)00588-5
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Surface processes before and during growth of GaAs (001)Journal of Crystal Growth, 1994
- Time-resolved x-ray scattering studies of layer-by-layer epitaxial growthPhysical Review Letters, 1992
- Atomic scale characterization of organometallic vapor phase epitaxial growth using in-situ grazing incidence X-ray scatteringJournal of Crystal Growth, 1992
- Gallium arsenide surface reconstructions during organometallic vapor-phase epitaxyApplied Physics Letters, 1992
- Experimental considerations for in situ X-ray scattering analysis of OMVPE growthNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1990
- In situ characterization of organometallic growth of ZnSe using grazing incidence X-ray scatteringJournal of Crystal Growth, 1990
- Atomic nature of organometallic-vapor-phase-epitaxial growthPhysical Review Letters, 1989
- Optical reflectance and electron diffraction studies of molecular-beam-epitaxy growth transients on GaAs(001)Physical Review Letters, 1987
- Crystal truncation rods and surface roughnessPhysical Review B, 1986
- Reflection high-energy electron diffraction oscillations from vicinal surfaces—a new approach to surface diffusion measurementsApplied Physics Letters, 1985