Silicide formation in Pd-a-Si:H Schottky barriers
- 1 August 1981
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 39 (3) , 274-276
- https://doi.org/10.1063/1.92670
Abstract
This letter gives the first report of a direct correlation of Schottky barrier characteristics to silicide growth on a‐Si:H. Changes in diode ideality factor (from 1.2 to 1.05) produced by annealing can now be directly attributed to growth of Pd2Si as demonstrated by Raman spectroscopy. Unannealed samples show long‐term changes in characteristics at room temperature due to slow silicide growth. However, Pd Schottky barriers possess ideal stable characteristics once silicide growth is complete.Keywords
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