The interfacial layer in MIS amorphous silicon solar cells
- 1 January 1979
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (1) , 548-550
- https://doi.org/10.1063/1.325651
Abstract
When an insulating layer of TiOx is added beneath the Ni barrier contact of amorphous silicon Schottky diodes, increases are produced in both the open‐circuit voltage and the short‐circuit current. The former change is explained by an increased barrier height and diode factor, and the latter change is at least partially caused by an increase in the width of the space‐charge region.This publication has 21 references indexed in Scilit:
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