Theory of the Schottky barrier solar cell
- 21 April 1977
- journal article
- Published by The Royal Society in Proceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences
- Vol. 354 (1676) , 101-118
- https://doi.org/10.1098/rspa.1977.0058
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- The effect of an electric field on the Auger and impact ionization probabilities in semiconductorsJournal of Physics C: Solid State Physics, 1976
- Interfacial states spectrum of a metal-silicon junctionSolid-State Electronics, 1976
- A formalism for the indirect Auger effect. IProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1976
- Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodesJournal of Physics D: Applied Physics, 1971
- Efficiency calculations of heterojunction solar energy convertersIEEE Transactions on Electron Devices, 1969
- Stress at the Si—SiO2interface and its relationship to interface statesIEEE Transactions on Electron Devices, 1968
- Band‐to‐Band Radiative Recombination in Groups IV, VI, and III‐V Semiconductors (I)Physica Status Solidi (b), 1967
- Recombination statistics for auger effects with applications to p-n junctionsSolid-State Electronics, 1963
- Contact Potential Difference Measurements by the Kelvin MethodProceedings of the Physical Society. Section B, 1957
- Characteristics of Compound Barrier Layer RectifiersProceedings of the Physical Society. Section A, 1950