Defect levels in CdS/CuInSe2 thin-film solar cells

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Abstract
Thermally stimulated capacitance spectroscopy has been employed to study the defect levels in high‐efficiency, CdS/CuInSe2 thin‐film solar cells. Voltage bias changes were used to probe the majority‐carrier traps and light bias was employed, for the first time, to reveal minority‐carrier traps. The light bias thermally stimulated capacitance has shown the presence of a distribution of electron trapping levels in CuInSe2. The capacitance under steady illumination shows that the traps produce a large photocapacitance. The implications of these observations in terms of device performance is discussed.