The Ga–As–Ge–Sn system: 800 °C liquidus isotherm and electrical properties of Ge–Sn-doped GaAs
- 1 June 1973
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 44 (6) , 2676-2680
- https://doi.org/10.1063/1.1662632
Abstract
A large part of the 800 °C liquidus isotherm of the Ga–As–Ge–Sn system has been determined experimentally and it has been demonstrated that the compositions of the liquidus surface can be adequately represented by a ``simple solution'' thermodynamic model. GaAs crystals were grown from liquidus compositions along several cuts of the quaternary isotherm and the variation of the electrical properties as a function of the composition of the liquid from which they were grown was determined. An extensive range of net carrier concentrations with heavy compensation can be readily achieved in this system.This publication has 17 references indexed in Scilit:
- Phase equilibria in the system Al–Ga–As–Sn and electrical properties of Sn-doped liquid phase epitaxial AlxGa1−xAsJournal of Applied Physics, 1973
- The growth and properties of LPE GaAsSolid-State Electronics, 1972
- Photolumineszenz-spektrum des Sn-Akzeptors in GaAsSolid State Communications, 1970
- Homogeneous solution grown epitaxial GaAs by tin dopingSolid-State Electronics, 1969
- New Deep-Level Luminescence in GaAs:SnJournal of Applied Physics, 1968
- Vapor pressures and phase equilibria in the GaAs systemJournal of Physics and Chemistry of Solids, 1967
- EFFICIENT ELECTROLUMINESCENCE FROM GaAs DIODES AT 300°KApplied Physics Letters, 1966
- The gallium-arsenic-tin and gallium-arsenic-germanium ternary systemsJournal of the Less Common Metals, 1966
- Phase equilibria of III–V compoundsActa Metallurgica, 1963
- Germanium and Silicon Liquidus CurvesBell System Technical Journal, 1960