Contactless monitoring of impurity activation in ion-implanted silicon by surface acoustic wave techniques
- 1 February 1980
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (2) , 1234-1237
- https://doi.org/10.1063/1.327693
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
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- Determination of electrical surface properties of Si, GaAs, and CdS using acoustic surface waveJournal of Vacuum Science and Technology, 1976
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- Ion implantation in semiconductors—Part II: Damage production and annealingProceedings of the IEEE, 1972
- THE ADJUSTMENT OF MOS TRANSISTOR THRESHOLD VOLTAGE BY ION IMPLANTATIONApplied Physics Letters, 1971
- Ion implantation in semiconductors—Part I: Range distribution theory and experimentsProceedings of the IEEE, 1968