Electrical modelling of Ion- Damaged GaAs schottky barrier interfaces
- 1 July 1989
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 18 (4) , 527-530
- https://doi.org/10.1007/bf02657783
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Study of Au-n-type GaAs Schottky contacts on a single-crystal part of large-grained polycrystalline GaAsJournal of Applied Physics, 1986
- Improved Schottky capacitance spectroscopy method for the study of interface states in metal-semiconductor junctionsApplied Physics Letters, 1984
- Characterization of the interface states at A1-GaAs schottky barriers with a thin interface layerSolid-State Electronics, 1983
- Capacitive effects of Au and Cu impurity levels in Pt-N type Si Schottky barriersSolid-State Electronics, 1973