New technique to dope GaAs crystals with the 111In→111Cd probe for perturbed-angular-correlation spectroscopy

30 November 1992

journal article
conference paper
Published by AIP Publishing in Applied Physics Letters

Vol. 61 (22) , 2668-2670
https://doi.org/10.1063/1.108103

Abstract

Perturbed‐angular‐correlation (PAC) spectroscopy is an important technique for measuring defect and dopant interactions in group IV and III‐V semiconductors. The probe of choice for most of the successful PAC experiments on semiconductors has been ¹¹¹In→¹¹¹Cd introduced by ion implantation. To expand the gamut of PAC experiments that can be performed on III‐V semiconductors, we have developed a simple closed‐tube, vapor‐phase‐epitaxy (VPE) technique to produce ¹¹¹In‐doped GaAs single‐crystal epitaxial materials. PAC measurements on these crystals yielded nearly nonperturbed correlations that indicate that the ¹¹¹In probe was incorporated substitutionally into the GaAs crystals. These correlations differ significantly from the previously reported weakly perturbed correlations that were measured on GaAs crystals implanted with ¹¹¹In ions. An exploratory experiment using this VPE technique also showed that Sn can be incorporated along with ¹¹¹In.

Keywords

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