Characterization of stain etched porous Si with photoluminescence, electron paramagnetic resonance, and infrared absorption spectroscopy
- 15 December 1993
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 74 (12) , 7615-7617
- https://doi.org/10.1063/1.354940
Abstract
No abstract availableThis publication has 20 references indexed in Scilit:
- Electron paramagnetic resonance observation of trigonally symmetric Si dangling bonds in porous silicon layers: Evidence for crystalline Si phaseApplied Physics Letters, 1993
- Microstructural investigations of light-emitting porous Si layersApplied Physics Letters, 1992
- Photoluminescence and formation mechanism of chemically etched siliconApplied Physics Letters, 1992
- Demonstration of photoluminescence in nonanodized siliconApplied Physics Letters, 1992
- Visible luminescence from silicon wafers subjected to stain etchesApplied Physics Letters, 1992
- Electronic structure of light-emitting porous SiApplied Physics Letters, 1992
- In Situ Fourier‐Transform Electromodulated Infrared Study of Porous Silicon Formation: Evidence for Solvent Effects on the Vibrational LinewidthsJournal of the Electrochemical Society, 1991
- Infrared analysis of film growth on the silicon surface in room airJournal of Vacuum Science & Technology A, 1989
- The formation of porous silicon by chemical stain etchesJournal of Crystal Growth, 1986
- Stain films on siliconJournal of Physics and Chemistry of Solids, 1960