GaInAsP/InP distributed feedback lasers grown directly on grated substrates by solid-source molecular beam epitaxy
- 1 May 1998
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 16 (3) , 1422-1425
- https://doi.org/10.1116/1.590223
Abstract
Successful growth of 1.3 and 1.55 μm GaInAsP/InP multiquantum well lasers directly on a distributed feedback (DFB) grating substrate using all solid-source molecular beam epitaxy was demonstrated. A 1.12 μm wavelength GaInAsP planarization layer with a nominal thickness of 500–650 Å was first grown on the DFB gratings at an elevated temperature to create a smooth surface for subsequent layer growth. Transmission electron micrograph showed smooth interfaces after the growth of this GaInAsP planarization layer. Low threshold current density and high quantum efficiency were obtained from these index-coupled DFB lasers.This publication has 4 references indexed in Scilit:
- Low threshold 1.3 μm lasers grown by solid-source molecular beam epitaxyJournal of Crystal Growth, 1997
- Solid-source MBE for growth of laser diode materialsJournal of Crystal Growth, 1997
- Reproducibility studies of lattice matched GaInAsP on (100) InP grown by molecular beam epitaxy using solid phosphorusApplied Physics Letters, 1994
- 1.3-μm wavelength GaInAsP/InP double heterostructure lasers grown by molecular beam epitaxyApplied Physics Letters, 1982