1.3-μm wavelength GaInAsP/InP double heterostructure lasers grown by molecular beam epitaxy

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Abstract
We report the first successful preparation of current injection GaInAsP/InP double heterostructure lasers operating at 1.3 μm by molecular beam epitaxy. The median threshold current density Jth is 3.5 kA/cm2, while the lowest Jth is 1.8 kA/cm2 for broad-area Fabry–Perot diodes of 380×200 μm and an active layer thickness of 0.2 μm. The threshold current-temperature dependence is described very closely by exp (T/T0) with T0 of 70–87 K in the temperature range 10°–65 °C. Elemental As and P (red phosphorus) were used as the primary molecular beam sources for deriving the As2 and P2 beams. In addition, the As and P ovens were equipped with recharge interlock systems. As a result, the growth chamber was always maintained in ultrahigh vacuum condition even during As and P recharge.