Kinetic Equation of Annealing in Lithium-Diffused Silicon
- 1 July 1970
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 41 (8) , 3453-3457
- https://doi.org/10.1063/1.1659441
Abstract
Some unusual annealing properties of the radiation damage in lithium-diffused silicon are discussed. These properties are (1) spontaneous room-temperature recovery, (2) the effect of oxygen content in silicon on the recovery, (3) the effect of the defect concentration on the recovery, (4) high damage effect on the recovery, and (5) redegradation. A kinetic equation is formulated by introducing the time dependence of free lithium concentration in the system to the kinetic equation of the repairing of the damage. The results successfully describe all the properties listed above.This publication has 21 references indexed in Scilit:
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