Defect-Concentration Dependence of Annealing Rate in Silicon
- 1 October 1967
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 38 (11) , 4552
- https://doi.org/10.1063/1.1709178
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Kinetics of complex defect annealing in siliconPhysics Letters A, 1967
- INTERACTION OF LITHIUM WITH IMPURITIES AND DEFECTS IN SILICONApplied Physics Letters, 1966
- Kinetics of complex defect annealing in siliconPhysics Letters, 1966
- LITHIUM-DOPED, RADIATION-RESISTANT SILICON SOLAR CELLSApplied Physics Letters, 1966
- Annealing of-Gamma-Irradiated GermaniumPhysical Review B, 1966
- Radiation Damage in Vitreous Silica: Annealing of the Density ChangesPhysical Review B, 1956