Kinetics of complex defect annealing in silicon
- 3 October 1966
- journal article
- Published by Elsevier in Physics Letters
- Vol. 23 (1) , 7-8
- https://doi.org/10.1016/0031-9163(66)90227-7
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- A method of determining the ratio of migration energy of lattice defects to order of annealing kineticsPhysics Letters, 1965
- Anisotropy of defect formation in radiated siliconPhysics Letters, 1965
- General Theory of Bimolecular Reaction Rates in Solids and LiquidsThe Journal of Chemical Physics, 1958
- Annealing of Electron Bombardment Damage in Silicon CrystalsPhysical Review B, 1957
- Theoretical Treatment of the Kinetics of Diffusion-Limited ReactionsPhysical Review B, 1957