Impurities dependence of annealing of γ-Ray irradiated n-type germanium
- 1 December 1965
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 26 (12) , 1895-1907
- https://doi.org/10.1016/0022-3697(65)90223-4
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Radiation Effects and Their Annealing in-Gamma-Irradiated Sb-Doped GermaniumPhysical Review B, 1964
- Annealing of γ-ray irradiated N-type germaniumJournal of Physics and Chemistry of Solids, 1963
- Radiation-Induced Recombination and Trapping Centers in Germanium. II. Annealing in Gamma-Irradiated, Antimony-, and Arsenic-Doped MaterialPhysical Review B, 1962
- Low-Temperature Length Change Measurements of Electron-Irradiated Germanium and SiliconPhysical Review B, 1962
- Mobility of Radiation-Induced Defects in GermaniumJournal of Applied Physics, 1961
- Anisotropic Hall Coefficients in n-Type GermaniumJournal of the Physics Society Japan, 1960
- Low-Temperature Annealing Studies in GeJournal of Applied Physics, 1959
- Annealing of Radiation Defects in SemiconductorsJournal of Applied Physics, 1959
- X-Ray and Expansion Effects Produced by Imperfections in Solids: Deuteron-Irradiated GermaniumJournal of Applied Physics, 1959
- Nature of Bombardment Damage and Energy Levels in SemiconductorsJournal of Applied Physics, 1959