Mg diffused zinc phosphide n/p junctions

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Abstract
Heating a Mg/Zn3P2 Schottky solar cell in air results in the formation of an n/p junction due to the diffusion of Mg in Zn3P2. The cells are fabricated on large grain polycrystalline Zn3P2 wafers. The junction depth is determined from the change in the measured collection efficiency of the cell after heating and follows a (time)1/2 dependence. The diffusion coefficient has been measured in the temperature range of 75–150 °C. The short‐circuit current and open‐circuit voltage of the homojunction qualitatively follow the theoretical predictions. A diffusion voltage of 1.2 V and a maximum open‐circuit voltage of 0.6 V have been achieved.