Direct nanometer-scale patterning by the cantilever oscillation of an atomic force microscope
- 6 July 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 75 (2) , 292-294
- https://doi.org/10.1063/1.124351
Abstract
A resistless nanostructure patterning technique using tip oscillation of an atomic force microscope (AFM) was systematically investigated. Commercial AFM cantilevers are used to successfully generate patterns as narrow as 10 nm on a GaAs surface, without further sharpening of the tips. Reliable patterns with fully controlled width and depth are achieved by adjusting the feedback gain and the scan speed. This process allows nanometer-scale patterning to be performed simply, and is well suited for nanodevice fabrication.Keywords
This publication has 12 references indexed in Scilit:
- Direct patterning of surface quantum wells with an atomic force microscopeApplied Physics Letters, 1998
- A metal/oxide tunneling transistorApplied Physics Letters, 1998
- Nanostructure patterns written in III–V semiconductors by an atomic force microscopeApplied Physics Letters, 1997
- STM/AFM nano-oxidation process to room-temperature-operated single-electron transistor and other devicesProceedings of the IEEE, 1997
- Sharpened electron beam deposited tips for high resolution atomic force microscope lithography and imagingApplied Physics Letters, 1995
- 1 nm deep mechanical processing of muscovite mica by atomic force microscopyApplied Physics Letters, 1995
- Fabrication of 0.1 μm metal oxide semiconductor field-effect transistors with the atomic force microscopeApplied Physics Letters, 1995
- Tip-induced anodization of titanium surfaces by scanning tunneling microscopy: A humidity effect on nanolithographyApplied Physics Letters, 1993
- Nanometer-scale lithography using the atomic force microscopeApplied Physics Letters, 1992
- Modification of hydrogen-passivated silicon by a scanning tunneling microscope operating in airApplied Physics Letters, 1990