High-power high-temperature operation laser diode with InGaAsP/InP buried heterostructure fabricated by single-step liquid-phase epitaxy
- 1 January 1982
- proceedings article
- Published by Optica Publishing Group
Abstract
No abstract availableThis publication has 2 references indexed in Scilit:
- Fabrication and characterization of narrow stripe InGaAsP/InP buried heterostructure lasersJournal of Applied Physics, 1980
- Fabrication and lasing properties of mesa substrate buried heterostructure GaInAsP/InP lasers at 1.3 µm wavelengthIEEE Journal of Quantum Electronics, 1980