Observation of Light-Induced Phenomena by Photoluminescence and Optically Detected Magnetic Resonance in a-Si:H
- 15 October 1989
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 58 (10) , 3828-3841
- https://doi.org/10.1143/jpsj.58.3828
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Nature of trapped hole centres (A centres) in a-Si:H : Investigation by optically detected magnetic resonance and photoinduced absorption measurements on
a-Si:H a-Si superlatticesSolid State Communications, 1988 - Light-induced photoluminiscence fatigue in a-Si:HJournal of Non-Crystalline Solids, 1987
- Gap states and recombination processes in one-dimensionally ordered and disordered a-Si : H/a-Si1−xNx:H multilayer filmsJournal of Non-Crystalline Solids, 1987
- Light-induced metastable defects in a-Si:H as elucidated by optically detected magnetic resonance measurements at 2KSolid State Communications, 1987
- Defects in a-Si:HPublished by Springer Nature ,1987
- Nitrogen-related defects and their role in the photo-induced phenomena in a-Si1−xNx:HJournal of Non-Crystalline Solids, 1985
- Chapter 4 Optically Detected Magnetic ResonancePublished by Elsevier ,1984
- Luminescence fatigue and light-induced electron spin resonance in amorphous silicon-hydrogen alloysSolar Energy Materials, 1982
- Luminescence fatigue and optically detected magnetic resonance in amorphous silicon-hydrogen alloysSolid State Communications, 1982
- Fatigue effect in luminescence of glow discharge amorphous silicon at low temperaturesSolid State Communications, 1980