Pt Schottky contacts to n-(Ga,Mn)N

The Schottky barrier height of Pt contacts on $\mathrm{n-(}\mathrm{Ga,Mn})\mathrm{N}$ ${\text{(n∼3.5×10}}^{17}\hspace{0.17em}{\mathrm{cm}}^{\text{−3}})$ thin films was obtained from current–voltage measurements as a function of temperature. The resulting values ranged from $\text{0.82±0.04\hspace{0.17em}}\mathrm{eV}$ at 25 °C to $\text{0.79±0.06\hspace{0.17em}}\mathrm{eV}$ at 100 °C with saturation current densities of ${\text{4.28×10}}^{\text{−8}}\hspace{0.17em}{\mathrm{A cm}}^{\text{−2}}$ (25 °C) to ${\text{8.42×10}}^{\text{−5}}\hspace{0.17em}{\mathrm{A cm}}^{\text{−2}}$ (100 °C), respectively. The barrier height at room temperature obtained from an activation energy plot was $\text{0.91±0.06\hspace{0.17em}}\mathrm{eV}.$ The reverse current magnitude was larger than predicted by thermionic emission alone, just as in n-GaN grown in a similar fashion on ${\mathrm{Al}}_2{\mathrm{O}}_3$ substrates. The measured barrier height for Pt on $\mathrm{n-(}\mathrm{Ga,Mn})\mathrm{N}$ is lower than for the value reported on n-GaN(1.08 eV).