Pixelless 1.5-/spl mu/m up-conversion imaging device fabricated by wafer fusion
- 20 June 2005
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 17 (7) , 1477-1479
- https://doi.org/10.1109/lpt.2005.849987
Abstract
We designed and fabricated a first-ever pixelless optical up-conversion imaging device using wafer-fusion technology. The device consists of an In/sub 0.53/Ga/sub 0.47/As-InP p-i-n detector and a GaAs-AlGaAs light-emitting diode (LED), which were grown on an InP and a GaAs substrate, respectively, and wafer-bonded together. The layer structures and doping profiles of the common region linking the detector and LED were designed such that lateral carrier diffusion was successfully suppressed while effective electrical connection was well preserved. Pixelless up-conversion imaging from 1.5 to 0.87 μm was demonstrated. Moreover, an internal electrical gain of over 100 was observed for the detector part of the integrated device. The internal up-conversion quantum efficiency was measured to be /spl sim/50% at room temperature.Keywords
This publication has 9 references indexed in Scilit:
- Optimized GaAs∕AlGaAs light-emitting diodes and high efficiency wafer-fused optical up-conversion devicesJournal of Applied Physics, 2004
- Pixelless imaging device using optical up-converterIEEE Electron Device Letters, 2004
- 1.5 to 0.87 µm optical upconversion device fabricated by wafer fusionElectronics Letters, 2003
- Room-temperature electro-optic up-conversion via internal photoemissionApplied Physics Letters, 2003
- Pixelless thermal imaging with integrated quantum-well infrared photodetector and light-emitting diodeIEEE Photonics Technology Letters, 2002
- Wafer-fused p-i-n InGaAs/Si photodiode with photogainApplied Physics Letters, 2001
- 1.5 µm up-conversion deviceElectronics Letters, 2000
- Near-infrared to visible up-conversion in a forward-biased Schottky diode with a p-doped channelApplied Physics Letters, 2000
- Integrated quantum well intersub-band photodetectorandlight emitting diodeElectronics Letters, 1995