1.5 µm up-conversion device
- 20 July 2000
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 36 (15) , 1300-1301
- https://doi.org/10.1049/el:20000915
Abstract
An epitaxially integrated 1.5 to 1 µm up-conversion device is reported. The device consists of a serially connected In0.53Ga0.47As photodiode and InAs0.1P0.9 light emitting diode, grown on InP. The device operation relies first on detecting a 1.5 µm signal by the photodiode and secondly on driving the emitter by the resulting photocurrent, thus achieving the up-conversion.Keywords
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